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FET stands for Field effect transistor. In simple its a variation of the standard transistor where the emitter is the source and the collector is the drain. The amount of electron flow through the potential barrier is controlled by a field and hence the name.
A field-effect transistor FET is a kind of solid-state device/ transistor that is often more stable than standard transistors….Field Effect Transistor…FET stands for Field effect transistor and hence the name….field-effect transistor…FET Field Effect Transistor is one of two major categories of transistor; the other is bipolar. FETs use a gate element that, when charged, creates
A field-effect transistor (FET) is a type of transistor commonly used for weak-signal amplification (for example, for amplifying wireless signals). The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. In the FET, current flows along a semiconductor path called the channel. At one end of the channel, there is an electrode called the source. At the other end of the channel, there is an electrode called the drain. The physical diameter of the channel is fixed, but its effective electrical diameter can be varied by the application of a voltage to a control electrode called the gate. The conductivity of the FET depends, at any given instant in time, on the electrical diameter of the channel.A small change in gate voltage can cause a large variation in the current from the source to the drain.This is how the FET amplifies signals. Field-effect transistors exist in two major classifications. These are known as the junction FET (JFET) and the metal-oxide- semiconductor FET (MOSFET). The junction FET has a channel consisting of N-type semiconductor (N-channel) or P-type semiconductor (P-channel) material; the gate is made of the opposite semiconductor type. In P-type material, electric charges are carried mainly in the form of electron deficiencies called holes. In N-type material, the charge carriers are primarily electrons. In a JFET, the junction is the boundary between the channel and the gate. Normally, this P-N junction is reverse-biased (a DC voltage is applied to it) so that no current flows between the channel and the gate.However, under some conditions there is a small current through the junction during part of the input signal cycle.