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Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory


FREE-DOWNLOAD W Kim, DW Kwon, JH Ji, JH Lee, JH Lee… – Japanese Journal of …, 2011
In this paper, we investigate the threshold voltage disturbance caused by programmed adjacent
cells in virtual source/drain (VSD) NAND flash memory device. The fringing field induced by charge
in an adjacent memory node inhibits the inversion of virtual source/drain region. So, it .





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