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RF SWITCH DESIGN DEVELOPMENT TESTING


RF switches are components used for switching the signal paths of high frequency circuits in wireless communication devices SPDT, DPDT , SP4T, SP6T, SP8T, and SP10T mechanical and solid state RF switches for 50-ohm and 75-ohm systems spanning DC to 26.5 GHz

Piezoelectric versus electrostatic actuation for a capacitive RF-MEMS switch
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CALCULATIONS The mechanical part of the RF switch is modelled by a cantilever beam, as shown in Figure 2. 631 Page 2. Figure 2: Cantilever models for electrostatic and piezoelectric actuation The expression

Improvements in GeTe-based inline phase-change switch technology for RF switching applications
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Keywords: GeTe, IPCS, TOI, RFSwitch Phase-Change Abstract An inline chalcogenide phase-change radiofrequency ( RF ) switch using germanium telluride and driven by an integrated, electrically isolated thin-film heater for thermal actuation has been fabricated

Performance of double-pole four-throw double-gate RF CMOS switch in 45-nm technology
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implemented with 45-nm CMOS process technology. This proposed RFswitch is capable to select the data streams from the two antennas for both the transmitting and re- ceiving processes. For the development of this DP4T

High performance SOI RF switch for healthcare application
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ABSTRACT The objective of this research was to design a 0-5 GHz RF SOI switch, with 0.18 um power Jazz SOI technology by using Cadence software, for health care applications. The ultimate goal for such application is minimize the trade-offs between performance and cost,

An ultra-low power InAs/AlSb HEMT X-band low-noise amplifier and RF switch
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AbstractSeveral antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch using 0.1- m gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated

A review paper on RF MEMS switch for wireless communication
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Also explains the dominance of RF Switch over existing devices like PIN Diodes and Field-Effect- Transistors with size, power, isolation, insertion loss, and graphically how Pull-in voltage affects on the tip deflection of the switch

Development of high power X-band semiconductor RF switch for pulse compression systems of future linear colliders
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Abstract We describe development of semiconductor X-band high-power RF switches. The target applications are high-power RF pulse compression systems for future linear colliders. We describe the design methodology of the architecture of the whole switch systems. We

Capacitive model and S-parameters of double-pole four-throw double-gate RF CMOS switch
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switch whatever they are ON or OFF. Keywords: Capacitive Model, Double-Gate MOSFET, DP4T Switch, Isolation, Radio Frequency, RFSwitch S-Parameter and VLSI 1. Introduction Continuous scaling of CMOS technology has

Design and simulation of RF MEMS capacitive type shunt switchits major applications
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www.iosrjournals.org 64 | Page 4.1 2.5- D and 3-D Simulation of RFSwitch Upstate Simulation: The switch structure is simulated in the upstate position by the ADS and HFSS simulatorsFig. 5 RFswitch structure in HFSS Simulator Page 6

RF MEMS switch technology for radio front end applications
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Removes performance objection to converged architecture MEMS RFswitch has superior Isolation/Harmonics Performance (>15dB compared with solid state)MEMS RFSwitch Is cost competitive to pHEMTin multi-throw application Lower harmonics, 10-15 dB

Parametric optimization of symmetric toggle RF MEMS switch for X-band applications
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Keywords: Symmetric Toggle Switch, RFswitch insertion loss, isolation, hafnium oxide. I. INTRODUCTIONFig. 7 shows the schematic view of fabrication flow for RFswitch . The surface micro- machined devices are fabricated on high resistivity silicon substrates

Effect of multilayer structure on electromechanical characteristics of RF MEMS capacitive Symmetric Toggle Switch for X-band applications
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Fig. 3 shows the schematic view of process flow for the RFswitch fabricationNext, a low temperature LPCVD oxide is deposited and the via holes are patterned on it. Since the switching structural elements are Figure 3: Schematic view of Process flow for RFswitch . (a) (b)

A prototype magnetically actuated MEMS RF switch
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Abstract The design, fabrication and testing of an electromagnetically driven MEMS actuator and its application for an X-band airborne radar system is presented. A classicpot core comprising of a conducting copper coil and a magnetically soft mover has been

S-Parameters Allow High-Frequency Verification of RF Switch Models
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Introduction to S-Parameters S (scattering) parameters are used to characterize electrical networks using matched impedances. Here, scattering refers to the way traveling currents or voltages are affected when they meet a discontinuity in a transmission line. S-parameters

Bi-stable RF MEMS switch with low actuation voltage
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past. In the past few years work has been done to use MEMS technologies in designing and fabricating an RFswitch that would in many ways replace the electronic and mechanical switches that have been used for so long

Low actuation voltage RF MEMS switch using varying section composite fixed-fixed beam
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pitting and hardening damage of contact area due to repetitive contact. Hence, pure Au is not suitable for RFswitch applications that require long cycling lifetime. On the other hand, hard metals like tungsten and molybdenum

RF MEMS Switches and Switch Matrices
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There are two principle applications which reflect the opposite extremes of the RF switch market. First, there is the satellite application which requires the use of large switch matrices that demand the highest switching performance

Computational prototyping of an RF MEMS switch using chatoyant
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Table 2: Simulation Times for Modal Analysis 3.4 Dynamic Behavior of RFSwitch 4 ELECTROSTATIC MODELINGFigure 6: Fast Switch Response (600us Rise Time) The main concept of the RFswitch of this type is to create low-voltage actuation

Analysis of RF MEMS capacitive switch based on a fixed-fixed beam structure
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In these systems, the RFswitch is one of the essential components to handle RF signals [1,2]. RF MEMS is an emerging technology that promises the potential of revolutionizing RF and microwave system implementation for the next generation of telecommunication applications

A new electrostatically actuated low voltage RF MEMS switch
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Keywords: RFSwitch Micro-electro-mechanical systems (MEMS), Electrostatic actuation, Low voltageFigure 4a shows the equivalent electrical model of the RF switch when it is off (Rebeiz and muldavin 2001). 2 3 1 3 Page 5

Characterization process of MOSFET with virtual instrumentation for DP4T RF switchA review
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Abstract With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single

Design and Analysis of MEMS Switch for RF Applications
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In order to reduce the effective switch resistance, 10 miniature RF MEMS switches have been placed in paralleland result in switchresistance of 5.9 KeywordsMEMS, RFswitch isolation, low voltage, insertion loss, COMSOL Multiphysics, Intellisuite

Frequency Reconfiguration of Microstrip Patch Antenna with Serpentine Spring Shaped RF MEMS Switch
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A microstrip patch antenna was modeled to operate at three frequencies. RFswitch with serpentine spring shape cantilever beam was designed to operate with 4V of pull-in voltage providing an isolation of67.9 dB at 12 GHz with insertion loss of0.094 dB at 12 GHz

Substrate material effect on the RF MEMSCapacitive type shunt switch
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the PIN diodes and FETs. In addition, the good insulation over a wide frequency band, make the RF MEMS privileged for low loss applications such as attenuators, filters, phase shifters and RFswitch . In the literature, these micro

A study on isolation performance of pin diode with defected ground structure (DGS) for RF switch
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ABSTRACT This project aims to study the performance of isolation with DGS under PIN Diode for SPST switch design. This project involves with the studies of the background of Defected Ground Structure (DGS), PIN diode and the isolation issue in RF switch . There has

Stability Analyses of Electrostatic Torsional RF MEMS Switch
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The SEM (Scanning Electron Microscope) image and 1 Degree of Freedom schematic of the torsional RFSwitch are shown in Fig.1. The angle of torsionis the only degree of freedom Fig.1. Topview micrograph and the schematic side view of the MEMS RFSwitch

TCAD Based Simulation, Growth and Characterization of Nitride-Based HEMT on Silicon for RF Switch Application
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Abstract In the research, an attempt has been carried out to address various significant technological hurdles for implementing epitaxial nitride based HEMT on silicon for RF switch application. The extent of this research is from fabrication level to circuit simulation in EDA

DESIGN OF NON-UNIFORM SHAPED RF MEMS SWITCH
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technology. KEYWORDS: RFSwitch Non-Uniform Shape, Cantilever, Ohmic, Actuation Pulse, Reliability, Contact Material, S- Parameters, LifetimeThe mechanical and electrical characteristics of RFswitch significantly depend on its structural parameters, so it

1-D EQUIVALENT CIRCUIT FOR RF MEMS CAPACITIVE SWITCH
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177 3. MULTI-PHYSICS PHENOMENONS IN MEMS RFSWITCH Presented in the previous chapter, elements analogues allow mapping of the multi-physic phenomenons, which are occurring in the capacitive RF MEMS switch

Notes on the114 MHZ switch and delay (PS-RF-LL-2065) andEPA switch and delay (PS-RF-LL-2065) plug-ins
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GaAs- RF SWITCH DC 4.6 GHz KSW-2-46 A »tiny« milestone of miniaturization, thatwhat the newly developed RF switch KSW-2-46 from MINI-CIRCUITS represents. With a body of only 5 x 5 x 1.5 mm the SPOT-switch offers an exceptional high isolation of up to 50 dB, min This paper investigates the use of stacked depletion-mode n-channel MOSFET (D-MOS) for RF switch applications. Compared to the commonly used enhancementmode MOSFET (E-MOS), the D-MOS transistor offers a significant reduction in on-state resistance

High-Power TDD RF Switch for 2.3 GHz Portable Internet
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Abstract-Information and communication industry has dramatically grown with starting mobile telecommunication services and spreading new services using high-speed internet or wireless LAN. Now in the Ubiquitous age, the wireless internet services face new

Design Comparison of RF SPDT Switch with Switchable Resonators for WiMAX and LTE in 3.5 GHz Band
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Keywords: SPDT, RFswitch absorptive SPDT switch, switchable resonator, ring resonator, parallel-coupled resonator INTRODUCTION Radio Frequency ( RF ) switch such as Single Pole Double Throw (SPDT), is one of the key components in the RF front- end system

Comparison and Analysis of GeTe-Based Phase Change RF Switch Structures and Modeling of Their Power Handling Capability
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Abstract: This paper discusses the design, fabrication, and measurement results of germanium telluride (GeTe) based phase change RF switches with two different heating schemes: direct heating and indirect heating. Both switch types are fabricated in-house

INNOVATIVE RF SWITCH TECHNOLOGIES
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ABSTRACT The presentation will highlight new technologies developed for wideband, low loss and linear RF switch technologies. New switch structures, like phase transition and phase change materials will be described, along with emerging MEMS zero-level packaged

RF SWITCH RF FILTER RF FILTER MIXER AGC IF FILTER
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Page 1. RX_in Supply Voltage External matching circuits resonator IF_out LO RF 1950 Page 2. LO1 LO2 LNA RFSWITCH RF FILTER RF FILTER MIXER AGC IF FILTER I Q DEMOD. m1 Component=I_LPF NF[0::8,0]=6.998 A _ in p u t B _ R F _ s w itc h C _ L N A D _ R F _ filte

DESIGN ASPECTS OF RF SWITCH
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ABSTRACT This paper presents a design of single-bit RF MEMS phase shifter. RF MEMS series resistive switches are used extensively in the frequency range of DC-40 GHz. These switches exhibit low insertion loss and better isolation at sufficiently high frequencies. The

A high-power RF switch for arterial spin labelling with a separate tagging coil
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Results: The switch was driven at 100mA (ON) and-30V (OFF) using a suitable PIN diode driver (eg). Performance of each channel at 600MHz is shown in table 1. Plots from the network analyzer are shown in figure 3. Discussion: The original ASL experimental setup

RF Switch Design
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Abstract For this project, we created a simulation platform in order to optimize the silicon-on- insulator (SOI), field effect transistor (FET) switch technology. There are many alterations that could make these switches more efficient. However, such alterations are infrequently

High Performance GaAs RF Switch with a P-Type Capping Layer
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Abstract Due to its low insertion loss and the high linearity, the Junction Pseudomorphic High Electron Mobility Transistor (JPHEMT) is widely used for RF switches in wireless communications. In this paper, we describe a JPHEMT with a p-type capping layer from the PAPERS Design and Characterization of Half Maxwell Fish-Eye Lens Antennas in Millimeter Waves . . B. Fuchs, O. Lafond, S. Rondineau, and M. HimdiDevelopment of Integrated HEB/MMIC Receivers

X-BAND HIGH POWER SOLID STATE RF SWITCH
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In this study, different types of high power solid state switches operating at X-Band are designed, fabricated and measured. The main objectives are small size and high power handling while keeping good return loss and low insertion loss. The related studies are

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch
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Abstract To design a Double-Pole Four-Throw (DP4T) RF switch measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found

OHMIC RF MEMS SWITCH WITH LOW LOSS AND LOW FORCE ON QUARTZ FOR RECONFIGURABLE CIRCUITS
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International Microwave Symposium Digest (MTT), pp. 12381241 Anaheim, CAUSA,2010. 19. D. Saias, P. Robert, S. Boret, C. Billard, G. Bouche, D. Belot, and P. Ancey,An Above IC MEMS RFSwitchIEEE Journal of Solid-State Circuits, VOL. 38, NO. 12, pp

Optimized Architectures for Cantilevered Beam RF MEMS Switch
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Novel Design of MEMS Ohmic RFSwitch with Low Voltage Actuation, International Conference on Circuits and Systems,

Performance Study of RF MEMS Ohmic Series Switch
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In Fig 2, the Z node displacement represents the contact voltage of RFswitch which is 13.6 V. The tip of the switch pulling down between 13.6 and 13.8 volts. The total displacement towards negative z direction is 1.5106m. 0 Fig 2: Plot showing contact voltage of RF MEMS

RF CMOS Switch Design Methodologies for Multiband Transceiver Applications
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The switch design methodologies presented in this paper should be of use in designing various blocks in emerging multiband transceiver applications. Keywords: CMOS RFswitch insertion loss, isolation loss, multiband power amplifier, Long Term Evolution (LTE)

Design optimization of RF MEMS meander based ohmic contact switch in CPW and microstrip line implementation
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The change in spring constant of the structure using suspension springs offers more flexibility since it does not considerably impact the size, weight and RF performance of a switch. The working principle of a RFswitch resembles theelectro-mechanical relay. In series

The RF MEMS Switch is a Solution for the LTE Advanced Standard
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LTE RF Frond End Smart Phone Platform highlighting RFSwitch placements and functionalities (Antenna Switch or Tx/Rx switch if combined in the same die can be placed inside Main FEM or as a Stand-alone component; Diversity Switch used for RX switching; Band Select

Design of a High Performance T/R Switch for 2.4 GHz RF Wireless Transceiver in 0.13m CMOS Technology
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Page 3. Insertion loss of an RFswitch evaluates its small signal power loss during the ON state of the switchElectromagn Res. C., 2009, 11, 91-107. [26] Mekanand, P.; Prawatrungruang, P.; Eungdamrong, D. 0.5u CMOS 2.4 GHz RF switch for wireless communications

High Power Amplifier Design with RF-MEMS Output Switch using Sonnet TM
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The advantage of GaN devices is that their load line resistance is higher than conventional pHEMTs resulting in greater bandwidth. The advantage of using a MEMS RFswitch over solid state switches is their ability to switch high power levels with high linearity

RF-MEMS-Based DPDT Switch on Silicon Substrate for Ku-Band Space-Borne Applications
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performance is obtained from the simulation. The physical parameters of the individual RFswitch are mentioned in Table 1. The complete layout of the DPDT switch with the detailed dimensions is shown in Fig. 2. In this remainder of

Miniaturized RF MEMS Switch Matrices
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Integrated interconnect networks for RFswitch matrix applications,IEEE Transactions on Microwave Theory and Techniques, Vol. 53, 12 21, 2005

A View towards High Speed Bi-stable RF MEMS Switch with Low Actuation Voltage
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In the past few years activities have been done to utilize MEMS technologies in designing and fabricating an RFswitch which can be replaced in many ways for the electronic and mechanical switches having been used for such a long time

DESIGN AND ANALYSIS OF VARIOUS MEMBRANE RF SHUNT CAPACITIVE SWITCH FOR LOW VOLTAGE APPLICATIONS
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The principle of MEMS RFswitch is some appropriate voltage need to be given to attain the displacement of membrane for switching usually rectangular based beams have the pull in voltage is given by the formula 3 0 0 8 27 p kg V A ε = (1)

RF MEMS Switch for Modulated Backscatter Communication
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Passive sensors with MBS communication are recently reported by different researcher groups ,. The basic principle of these devices is that a load impedance ZL presented to an antenna feed point is toggled by a RFswitch and thus the reflecting behavior of the antenna

Study on RF MEMS Switch Matrix in Multifunctional Phased Array Antennas
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Compared with conventional mechanical RFswitch matrix, the switch matrix using RF MEMS technique has a massive reduce in both volume and mass but keeps a similar radio frequency performance at the same time . Meanwhile, the RF performance of RF MEMS switch

Process Development of GaAs Based RF MEMS Switch
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At 0 V capacitance is around 0.2 pf. Switching of the capacitance up to 2 pf is observed around 15 to 20 V and depends on geometry of the RFswitch capacitor. Fig.6: SEM picture of meander RF MEMS showing Au beam hanging between anchors

ANovel SEESAW-TYPE RF MEMS SWITCH WITH MINIMUM STRESS IN MEMBRANE FOR RF FRONTEND APPLICATIONS
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These include high reliability, low actuation voltage, low transition time, high power handling capability. Thus, commercial applications today can employ RF MEMS switches instead of semiconductor RFswitch technology. This

LOW VOLTAGE RF MICROELECTRO-MECHANICAL SWITCH USING 0.35 um MIMOS CMOS COMPATIBLE PROCESS
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INTRODUCTION Micro-Electro-Mechanical System (MEMS) is a current research leads to many electronics devices such as accelerometer, Radio Frequency ( RF ) switch pressure sensor, gas sensor, micro pump, micro relay, micro mirror, micro nozzle, flow sensor

ELECTRONICS COMPONENTS SALES AND SERVICE-INTEGRATED CIRCUIT-ANALOG, DIGITAL, DSP, RF IC, WIRLESS IC, VLSI, CAPACITOR, RESISTOR, INDUCTOR, PCB, MODULE, SENSOR