# bjt 3

Not surprisingly, SPICE gives us a similar plot: a flat line, holding steady this time at 7.5 mA — exactly 100 times the base current — over the range of battery voltages from just above 0 volts to 50 volts. It appears that the base current is the deciding factor for collector current, the V1 battery voltage being irrelevant so long as its above a certain minimum level.

This voltage/current relationship is entirely different from what we’re used to seeing across a resistor. With a resistor, current increases linearly as the voltage across it increases. Here, with a transistor, current from emitter to collector stays limited at a fixed, maximum value no matter how high the voltage across emitter and collector increases.

Often it is useful to superimpose several collector current/voltage graphs for different base currents on the same graph. A collection of curves like this — one curve plotted for each distinct level of base current — for a particular transistor is called the transistor’s characteristic curves:

Each curve on the graph reflects the collector current of the transistor, plotted over a range of collector-to-emitter voltages, for a given amount of base current. Since a transistor tends to act as a current regulator, limiting collector current to a proportion set by the base current, it is useful to express this proportion as a standard transistor performance measure. Specifically, the ratio of collector current to base current is known as the Beta ratio (symbolized by the Greek letter β):

Sometimes the β ratio is designated as “hfe,” a label used in a branch of mathematical semiconductor analysis known as “hybrid parameters” which strives to achieve very precise predictions of transistor performance with detailed equations. Hybrid parameter variables are many, but they are all labeled with the general letter “h” and a specific subscript. The variable “hfe” is just another (standardized) way of expressing the ratio of collector current to base current, and is interchangeable with “β.” Like all ratios, β is unitless.

β for any transistor is determined by its design: it cannot be altered after manufacture. However, there are so many physical variables impacting β that it is rare to have two transistors of the same design exactly match. If a circuit design relies on equal β ratios between multiple transistors, “matched sets” of transistors may be purchased at extra cost. However, it is generally considered bad design practice to engineer circuits with such dependencies.

It would be nice if the β of a transistor remained stable for all operating conditions, but this is not true in real life. For an actual transistor, the β ratio may vary by a factor of over 3 within its operating current limits. For example, a transistor with advertised β of 50 may actually test with Ic/Ib ratios as low as 30 and as high as 100, depending on the amount of collector current, the transistor’s temperature, and frequency of amplified signal, among other factors. For tutorial purposes it is adequate to assume a constant β for any given transistor (which is what SPICE tends to do in a simulation), but just realize that real life is not that simple!

Sometimes it is helpful for comprehension to “model” complex electronic components with a collection of simpler, better-understood components. The following is a popular model shown in many introductory electronics texts:

This model casts the transistor as a combination of diode and rheostat (variable resistor). Current through the base-emitter diode controls the resistance of the collector-emitter rheostat (as implied by the dased line connecting the two components), thus controlling collector current. An NPN transistor is modeled in the figure shown, but a PNP transistor would be only slightly different (only the base-emitter diode would be reversed). This model succeeds in illustrating the basic concept of transistor amplification: how the base current signal can exert control over the collector current. However, I personally don’t like this model because it tends to miscommunicate the notion of a set amount of collector-emitter resistance for a given amount of base current. If this were true, the transistor wouldn’t regulate collector current at all like the characteristic curves show. Instead of the collector current curves flattening out after their brief rise as the collector-emitter voltage increases, the collector current would be directly proportional to collector-emitter voltage, rising steadily in a straight line on the graph.

A better transistor model, often seen in more advanced textbooks, is this:

It casts the transistor as a combination of diode and current source, the output of the current source being set at a multiple (β ratio) of the base current. This model is far more accurate in depicting the true input/output characteristics of a transistor: base current establishes a certain amount of collector current, rather than a certain amount of collector-emitter resistance as the first model implies. Also, this model is favored when performing network analysis on transistor circuits, the current source being a well-understood theoretical component. Unfortunately, using a current source to model the transistor’s current-controlling behavior can be misleading: in no way will the transistor ever act as a source of electrical energy, which the current source symbol implies is a possibility.

My own personal suggestion for a transistor model substitutes a constant-current diode for the current source:

Since no diode ever acts as a source of electrical energy, this analogy escapes the false implication of the current source model as a source of power, while depicting the transistor’s constant-current behavior better than the rheostat model. Another way to describe the constant-current diode’s action would be to refer to it as a current regulator, so this transistor illustration of mine might also be described as a diode-current regulator model. The greatest disadvantage I see to this model is the relative obscurity of constant-current diodes. Many people may be unfamiliar with their symbology or even of their existence, unlike either rheostats or current sources, which are commonly known.

REVIEW:
A transistor is said to be in its active mode if it is operating somewhere between fully on (saturated) and fully off (cutoff).
Base current tends to regulate collector current. By regulate, we mean that no more collector current may exist than what is allowed by the base current.
The ratio between collector current and base current is called “Beta” (β) or “hfe“.
β ratios are different for every transistor, and they tend to change for different operating conditions.

## The common-emitter amplifier

At the beginning of this chapter we saw how transistors could be used as switches, operating in either their “saturation” or “cutoff” modes. In the last section we saw how transistors behave within their “active” modes, between the far limits of saturation and cutoff. Because transistors are able to control current in an analog (infinitely divisible) fashion, they find use as amplifiers for analog signals.

One of the simpler transistor amplifier circuits to study is the one used previously for illustrating the transistor’s switching ability:

It is called the common-emitter configuration because (ignoring the power supply battery) oth the signal source and the load share the emitter lead as a common connection point. This is not the only way in which a transistor may be used as an amplifier, as we will see in later sections of this chapter:

Before, this circuit was shown to illustrate how a relatively small current from a solar cell could be used to saturate a transistor, resulting in the illumination of a lamp. Knowing now that transistors are able to “throttle” their collector currents according to the amount of base current supplied by an input signal source, we should be able to see that the brightness of the lamp in this circuit is controllable by the solar cell’s light exposure. When there is just a little light shone on the solar cell, the lamp will glow dimly. The lamp’s brightness will steadily increase as more light falls on the solar cell.

Suppose that we were interested in using the solar cell as a light intensity instrument. We want to be able to measure the intensity of incident light with the solar cell by using its output current to drive a meter movement. It is possible to directly connect a meter movement to a solar cell for this purpose. In fact, the simplest light-exposure meters for photography work are designed like this:

While this approach might work for moderate light intensity measurements, it would not work as well for low light intensity measurements. Because the solar cell has to supply the meter movement’s power needs, the system is necessarily limited in its sensitivity. Supposing that our need here is to measure very low-level light intensities, we are pressed to find another solution.

Perhaps the most direct solution to this measurement problem is to use a transistor to amplify the solar cell’s current so that more meter movement needle deflection may be obtained for less incident light. Consider this approach:

Current through the meter movement in this circuit will be β times the solar cell current. With a transistor β of 100, this represents a substantial increase in measurement sensitivity. It is prudent to point out that the additional power to move the meter needle comes from the battery on the far right of the circuit, not the solar cell itself. All the solar cell’s current does is control battery current to the meter to provide a greater meter reading than the solar cell could provide unaided.

Because the transistor is a current-regulating device, and because meter movement indications are based on the amount of current through their movement coils, meter indication in this circuit should depend only on the amount of current from the solar cell, not on the amount of voltage provided by the battery. This means the accuracy of the circuit will be independent of battery condition, a significant feature! All that is required of the battery is a certain minimum voltage and current output ability to be able to drive the meter full-scale if needed.

Another way in which the common-emitter configuration may be used is to produce an output voltage derived from the input signal, rather than a specific output current. Let’s replace the meter movement with a plain resistor and measure voltage between collector and emitter:

With the solar cell darkened (no current), the transistor will be in cutoff mode and behave as an open switch between collector and emitter. This will produce maximum voltage drop between collector and emitter for maximum Voutput, equal to the full voltage of the battery.

At full power (maximum light exposure), the solar cell will drive the transistor into saturation mode, making it behave like a closed switch between collector and emitter. The result will be minimum voltage drop between collector and emitter, or almost zero output voltage. In actuality, a saturated transistor can never achieve zero voltage drop betwen collector and emitter due to the two PN junctions through which collector current must travel. However, this “collector-emitter saturation voltage” will be fairly low, around several tenths of a volt, depending on the specific transistor used.

For light exposure levels somewhere between zero and maximum solar cell output, the transistor will be in its active mode, and the output voltage will be somewhere between zero and full battery voltage. An important quality to note here about the common-emitter configuration is that the output voltage is inversely proportional to the input signal strength. That is, the output voltage decreases as the input signal increases. For this reason, the common-emitter amplifier configuration is referred to as an inverting amplifier.

common-emitter amplifier
i1 0 1 dc
q1 2 1 0 mod1
r 3 2 5000
v1 3 0 dc 15
.model mod1 npn
.dc i1 0 50u 2u
.plot dc v(2,0)
.end

type npn
is 1.00E-16
bf 100.000
nf 1.000
br 1.000
nr 1.000

At the beginning of the simulation where the current source (solar cell) is outputting zero current, the transistor is in cutoff mode and the full 15 volts from the battery is shown at the amplifier output (between nodes 2 and 0). As the solar cell’s current begins to increase, the output voltage proportionally decreases, until the transistor reaches saturation at 30 µA of base current (3 mA of collector current). Notice how the output voltage trace on the graph is perfectly linear (1 volt steps from 15 volts to 1 volt) until the point of saturation, where it never quite reaches zero. This is the effect mentioned earlier,where a saturated transistor can never achieve exactly zero voltage drop between collector and emitter due to internal junction effects. What we do see is a sharp output voltage decrease from 1 volt to 0.2261 volts as the input current increases from 28 µA to 30 µA, and then a continuing decrease in output voltage from then on (albeit in progressively smaller steps). The lowest the output voltage ever gets in this simulation is 0.1299 volts, asymptotically approaching zero.

So far, we’ve seen the transistor used as an amplifier for DC signals. In the solar cell light meter example, we were interested in amplifying the DC output of the solar cell to drive a DC meter movement, or to produce a DC output voltage. However, this is not the only way in which a transistor may be employed as an amplifier. In many cases, what is desired is an AC amplifier for amplifying alternating current and voltage signals. One common application of this is in audio electronics (radios, televisions, and public-address systems). Earlier, we saw an example where the audio output of a tuning fork could be used to activate a transistor as a switch. Let’s see if we can modify that circuit to send power to a speaker rather than to a lamp:

In the original circuit, a full-wave bridge rectifier was used to convert the microphone’s AC output signal into a DC voltage to drive the input of the transistor. All we cared about here was turning the lamp on with a sound signal from the microphone, and this arrangement sufficed for that purpose. But now we want to actually reproduce the AC signal and drive a speaker. This means we cannot rectify the microphone’s output anymore, because we need undistorted AC signal to drive the transistor! Let’s remove the bridge rectifier and replace the lamp with a speaker:

Since the microphone may produce voltages exceeding the forward voltage drop of the base-emitter PN (diode) junction, I’ve placed a resistor in series with the microphone. Let’s simulate this circuit now in SPICE and see what happens:

common-emitter amplifier
vinput 1 0 sin (0 1.5 2000 0 0)
r1 1 2 1k
q1 3 2 0 mod1
rspkr 3 4 8
v1 4 0 dc 15
.model mod1 npn
.tran 0.02m 0.74m
.plot tran v(1,0) i(v1)
.end

The simulation plots both the input voltage (an AC signal of 1.5 volt peak amplitude and 2000 Hz frequency) and the current through the 15 volt battery, which is the same as the current through the speaker. What we see here is a full AC sine wave alternating in both positive and negative directions, and a half-wave output current waveform that only pulses in one direction. If we were actually driving a speaker with this waveform, the sound produced would be horribly distorted.

What’s wrong with the circuit? Why won’t it faithfully reproduce the entire AC waveform from the microphone? The answer to this question is found by close inspection of the transistor diode-regulating diode model:

Collector current is controlled, or regulated, through the constant-current mechanism according to the pace set by the current through the base-emitter diode. Note that both current paths through the transistor are monodirectional: one way only! Despite our intent to use the transistor to amplify an AC signal, it is essentially a DC device, capable of handling currents in a single direction only. We may apply an AC voltage input signal between the base and emitter, but electrons cannot flow in that circuit during the part of the cycle that reverse-biases the base-emitter diode junction. Therefore, the transistor will remain in cutoff mode throughout that portion of the cycle. It will “turn on” in its active mode only when the input voltage is of the correct polarity to forward-bias the base-emitter diode, and only when that voltage is sufficiently high to overcome the diode’s forward voltage drop. Remember that bipolar transistors are current-controlled devices: they regulate collector current based on the existence of base-to-emitter current, not base-to-emitter voltage.

The only way we can get the transistor to reproduce the entire waveform as current through the speaker is to keep the transistor in its active mode the entire time. This means we must maintain current through the base during the entire input waveform cycle. Consequently, the base-emitter diode junction must be kept forward-biased at all times. Fortunately, this can be accomplished with the aid of a DC bias voltage added to the input signal. By connecting a sufficient DC voltage in series with the AC signal source, forward-bias can be maintained at all points throughoutthe wave cycle:

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1. Guru

Bipolar junction transistor
A bipolar (junction) transistor (BJT) is a three-terminal electronic device constructed of doped semiconductor material and may be used in amplifying …
The other type of BJT is the PNP with the letters “P” and “N” referring to the majority charge carriers inside the different regions of the transistor. …
The heterojunction bipolar transistor (HBT) is an improvement of the BJT that can handle signals of very high frequencies up to several hundred GHz. …
Introduction – Structure – Regions of operation – History
http://en.wikipedia.org/wiki/Bipolar_junction_transistor

A Bipolar Junction Transistor (a.k.a. a BJT or Bipolar Transistor) is an active semiconductor device formed by two P-N junctions whose function is amplification of an electric …
… material (alternating P-type and N-type), with 2 resulting P-N junctions. Schematically, a bipolar transistor can be thought of in this fashion: BJT layers. One P-N junction is between the emitter and the base; the other P-N junction is between the collector and the base. Note …
http://encyclobeamia.solarbotics.net/articles/bip_junct_trans.html

Bipolar junction transistor – Basics. Introduction. Walter Brattain, John Bardeen, and William Shockley invented the. bipolar junction transistor (BJT) in 1949, while working for Bell Telephone. Laboratories. This revolutionary invention changed the world. The invention of the BJT followed …
The point-contact transistor has several problems that prevented it from. becoming a viable device. BJT is a three-terminal device. BJT is used as amplifier and switch …
http://www.ecse.rpi.edu

The Bipolar Junction Transistor. • The term Bipolar is because two type of charges. (electrons and holes) are involved in the flow of. electricity. • The term Junction is because there are two pn. junctions. • There are two configurations for this device. n-type p-type n-type …
The terminals of the transistor are labelled Base,. Emitter, and Collector. – The emitter is always drawn with the arrow. Base. Emitter. Collector …

Bipolar Junction Transistor (BJT). A Bipolar Junction Transistor (BJT) has three terminals connected to three doped semiconductor regions. In an npn transistor, a thin and lightly doped p-type material is sandwiched between two thicker n-type materials …
of the transistor with respect to the common emitter \$E\$ . The BE junction is forward biased while the CB junction is reverse biased. The voltages of CB and CE configurations are related by: …
http://fourier.eng.hmc.edu/e84/lectures/ch4/node3.html

for a BJT is strongly influenced by the base current and only weakly influenced by the collector-to-emitter. voltage. file 02482. Question 7. From an examination of the energy diagram for …
Bipolar junction transistor (BJT) function is usually considered in terms of currents: a relatively small …
currents through bipolar junction transistors, since there are three different currents (IB, IC, IE) and they. must ”mesh” through the transistor in a …
http://openbookproject.net/books/socratic/output/bjt0.pdf

A bipolar junction transistor consists of three regions of doped semiconductors. A small current in the center or base region can be used to control a larger …
These form some of the constraints on transistor operation which are a part of the design of any circuit. A typical set, for the silicon transistor …
http://hyperphysics.phy-astr.gsu.edu/hbase/solids/trans.html

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